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参数资料
| 型号： | 2SA1085ETZ-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43A, TO-92(1), 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 189K |
| 代理商： | 2SA1085ETZ-E |
2SA1084, 2SA1085
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SA1084
2SA1085
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–90
—
–120
—
V
IC = –10
A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–90
—
–120
—
V
IC = –1 mA,
RBE =
∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–0.1
—
–0.1
A
VCB = –50 V, IE = 0
Emitter cutoff current
IEBO
—
–0.1
—
–0.1
A
VEB = –2 V, IC = 0
DC current transfer ratio
hFE*
1
250
—
800
250
—
800
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
–0.2
—
–0.2
V
IC = –10 mA,
IB = –1 mA
Base to emitter voltage
VBE
—
–0.6
—
–0.6
—
V
VCE = –12 V,
IC = –2 mA
Gain bandwidth product
fT
—
90
—
90
—
MHz
VCE = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
—
3.5
—
3.5
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Noise voltage referred to
input
en
—
0.5
—
0.5
—
nV/
√Hz
VCE = –6V,
IC = –10 mA,
f = 1 kHz,
Rg = 0,
f = 1Hz
Note:
1. The 2SA1084 and 2SA1085 are grouped by hFE as follows.
D
E
250 to 500
400 to 800
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相关代理商/技术参数 |
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|---|---|
| 2SA1090 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-18 |
| 2SA1091 | 制造商:n/a 功能描述:2SA1091 TO92 N9H1D 制造商:ROHM Semiconductor 功能描述: |
| 2SA1091_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
| 2SA1091O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1091-O(F) | 制造商:Toshiba 功能描述:PNP -300V -0.1A 70 to 140 TO92 Bulk |
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