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参数资料
| 型号： | 2SA1297-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 216K |
| 代理商： | 2SA1297-Y |
2SA1297
2010-03-15
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
6
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.1 A
120
400
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.1 A
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.1 A
0.85
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
40
pF
Note: hFE (1) Y: 120 to 240, GR: 200 to 400
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
MINI
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1298-Y-TP | 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1298-O-TP | 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1300-Y | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1300-GR | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1300-Y | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1297-Y(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-O(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1298-Y,LF | 功能描述:TRANS PNP 25V 0.8A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:800mA 电压 - 集射极击穿（最大值）:25V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:400mV @ 20mA，500mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:160 @ 100mA，1V 功率 - 最大值:200mW 频率 - 跃迁:120MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:S-Mini 标准包装:1 |
| 2SA1299 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92S -50V -.2A .3W ECB |
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