参数资料
型号: 2SA1323B
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: NS-B1, 3 PIN
文件页数: 2/4页
文件大小: 209K
代理商: 2SA1323B
2SA1323
2
SJC00018BED
VCE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
IC VBE
Cob VCB
Cre VCE
GP IC
0
160
40
120
80
0
500
400
300
200
100
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
0
12
10
8
2
6
4
0
24
20
16
12
8
4
Ta
= 25°C
100 A
150 A
50 A
200 A
IB
= 250 A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
400
300
100
200
Ta
= 25°C
VCB
= 10 V
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
1
10
100
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
0
5
4
3
2
1
f
= 1 MHz
IE
= 0
Ta
= 25°C
Collector-base voltage V
CB (V)
1
10
100
0
6
5
4
3
2
1
IC
= 1 mA
f
= 10.7 MHz
Ta
= 25°C
Collector-emitter voltage V
CE (V)
Reverse
transfer
capacitance
C
re
(pF)
(Common
emitter)
0.1
1
10
100
0
24
20
16
12
8
4
VCE
= 10 V
f
= 100 MHz
Ta
= 25°C
Power
gain
G
P
(dB
)
Collector current I
C (mA)
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