参数资料
型号: 2SA1357-O
元件分类: 功率晶体管
英文描述: 5 A, 20 V, PNP, Si, POWER TRANSISTOR
文件页数: 1/4页
文件大小: 140K
代理商: 2SA1357-O
2SA1357
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1357
Strobe Flash Applications
Audio Power Amplifier Applications
hFE(1) = 100 to 320 (VCE = 2 V, IC = 0.5 A)
hFE(2) = 70 (min) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 1.0 V (max)
(IC = 4 A, IB = 0.1 A)
High power dissipation: PC = 10 W (Tc = 25°C),
PC = 1.5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
5
Collector current
Pulsed
(Note 1)
ICP
8
A
Base current
IB
1
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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