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参数资料
| 型号： | 2SA1416-S |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PCP, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 91K |
| 代理商： | 2SA1416-S |
2SA1416 / 2SC3646
No.2005-1/5
Features
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)120
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
500
mW
Mounted on a ceramic board (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Marking 2SA1416 : AB
2SC3646 : CB
www.semiconductor-sanyo.com/network
Ordering number : EN2005B
31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1416 / 2SC3646
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1416S | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
| 2SA1416R | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
| 2SC3646R | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
| 2SA1416-R | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3646T | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1416S-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 1A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1416T-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 1A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1417S-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1417T-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1418 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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