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参数资料
| 型号： | 2SA1418S |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PCP, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 129K |
| 代理商： | 2SA1418S |
2SA1418 / 2SC3648
Rev.0 I Page 5 of 5 I www.onsemi.com
2SA1418_2SC3648/D
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相关PDF资料 |
PDF描述 |
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| 2SA1418R | 700 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1418S-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1418T-TD-E | 制造商:ON Semiconductor 功能描述:BIP PNP 0.7A 160V - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP PNP 0.7A 160V |
| 2SA1419S-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1419S-TD-H | 功能描述:两极晶体管 - BJT BIP PNP 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1419T-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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