- 您现在的位置：买卖IC网 > PDF目录30487 > 2SA1601 15 A, 40 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA1601 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ITO-220, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 298K |
| 代理商： | 2SA1601 |
Unit : mm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
LSV Series
Switching Power Transistor
OUTLINE DIMENSIONS
Case : ITO-220
-15A PNP
2SA1601
(TP15T4)
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55`150
Junction Temperature
Tj
150
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-40
V
Emitter to Base Voltage
VEBO
-7
V
Collector Current DC
IC
-15
A
Collector Current Peak
ICP
-30
A
Base Current DC
IB
-2
A
Base Current Peak
IBP
-3
A
Total Transistor Dissipation
PT
Tc = 25
45
W
Dielectric Strength
Vdis
Terminal to case, AC 1 minute
2
kV
Mounting Torque
TOR
(Recommended torque : 0.3Nm)
0.5
Nm
Electrical Characteristics (Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Collector to Emitter Sustaining Voltage
VCEO(sus)
IC = -0.1A
Min -40
V
Collector Cutoff Current
ICBO
At rated Voltage
Max -0.1
mA
ICEO
Max -0.1
Emitter Cutoff Current
IEBO
At rated Voltage
Max -0.1
mA
DC Current Gain
hFE
VCE = -2V, IC = -7.5A
Min 70
Collector to Emitter Saturation Voltage
VCE(sat)
IC = -7.5A
Max -0.3
V
Base to Emitter Saturation Voltage
VBE(sat)
IB = -0.4A
Max -1.2
V
Thermal Resistance
jc
Junction to case
Max 2.77 /W
Transition Frequency
fT
VCE = -10V, IC = -1.5A
TYP 50
MHz
Turn on Time
ton
Max 0.3
IC = -7.5A
Storage Time
ts
IB1 = -0.75A, IB2 = -0.75A
Max 1.5
s
RL = 4, VBB2 = -4V
Fall Time
tf
Max 0.5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1610Y34-T1-A | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1610Y33-T1-A | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1610Y34-T2-A | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1610Y34-T2 | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1610Y33-T1-A | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1601-4000 | 功能描述:两极晶体管 - BJT V=-40 IC=-15 HFE=70 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1606 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP TO-220ML |
| 2SA1607-4-TB-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 20V 0.15A SOT23 |
| 2SA1608 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1608-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Transistor,40V,0.5A,SSP3 制造商:Renesas 功能描述:Trans GP BJT PNP 40V 0.5A 3-Pin SC-70 T/R |
发布紧急采购，3分钟左右您将得到回复。