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参数资料
| 型号： | 2SA1601 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ITO-220, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 298K |
| 代理商： | 2SA1601 |
2SK2425
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS =250 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.4
0.55
I
D = 4 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
3.0
5.0
—
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
690
—
pF
V
DS = 10 V
Output capacitance
Coss
—
265
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
45
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
13
—
ns
I
D = 4 A
Rise time
t
r
—
55
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
65
—
ns
R
L = 7.5
Fall time
t
f
—37—ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 7 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
180
—
ns
I
F = 7 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristics curves of 2SK1667, 2SK1668.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1601-4000 | 功能描述:两极晶体管 - BJT V=-40 IC=-15 HFE=70 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1606 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP TO-220ML |
| 2SA1607-4-TB-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 20V 0.15A SOT23 |
| 2SA1608 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1608-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Transistor,40V,0.5A,SSP3 制造商:Renesas 功能描述:Trans GP BJT PNP 40V 0.5A 3-Pin SC-70 T/R |
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