- 您现在的位置：买卖IC网 > PDF目录30488 > 2SA1615-Z 10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA1615-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 3/7页 |
| 文件大小： | 232K |
| 代理商： | 2SA1615-Z |
Data Sheet P15245EJ1V0DS
3
2SC5652
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
300
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
02
4
6
8
10
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
10
20
0
0.4
0.2
0.6
0.8
1.0
VCE = 3 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
10
20
0
0.4
0.2
0.6
0.8
1.0
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
10
20
0
0.4
0.2
0.6
0.8
1.0
IB : 40 A step
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
15
10
5
02
4
6
8
IB = 40 A
160 A
400 A
240 A
80 A
320 A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1615-L | 10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1615 | 10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1615-ZK | 10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1618-GR | 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1618 | 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1615-ZT1L | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1617 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-59-55V -.1A .15W EBC |
| 2SA1618 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1618-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1618-GR(TE85L,F | 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。