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Document No. D14839EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1647,1647-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
c
2002
The mark
shows major revised points.
The 2SA1647 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Low collector saturation voltage:
VCE(sat)1 =
0.3 V MAX. (IC = 3.0 A)
Fast switching speed:
tf = 0.4
s MAX. (IC = 3.0 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Base to emitter voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)
Note 1
10
A
Base current (DC)
IB(DC)
2.5
A
Total power dissipation (Tc = 25
°C)
PT
18
W
Total power dissipation (TA = 25
°C)
PT
1.0
Note 2, 2.0Note 3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
PACKAGE DRAWINGS (Unit: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12
3
4
6.5±0.2
5.0±0.2
4.3
MAX.
0.8
2.3 2.3
0.9
MAX.
5.5±0.2
10.0
MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.3±0.2
0.5±0.1
0.8
MAX.
0.8
1.0
MIN.
1.8TYP.
0.7
1.1±0.2
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector Fin
TO-251 (MP-3)
TO-252 (MP-3Z)
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Printing board mounted
3. 7.5 mm
2
× 0.7 mm ceramic board mounted