参数资料
型号: 2SA1708T
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: NMP, 3 PIN
文件页数: 1/5页
文件大小: 57K
代理商: 2SA1708T
2SA1708 / 2SC4488
No.3094-1/5
Features
Adoption of FBET, MBIT processes.
High breakdown voltage, large current capacity.
Fast switching speed.
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)120
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
1W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)100V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE
VCE=(--)5V, IC=(--)100mA
100*
400*
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)100mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(13)8.5
pF
Continued on next page.
* : The 2SA1708 / 2SC4488 are classified by 100mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
www.semiconductor-sanyo.com/network
Ordering number : EN3094A
22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1708 / 2SC4488
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
相关PDF资料
PDF描述
2SC4488S 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SA1714 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
2SA1714-L 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
2SA1720-AZ 10 A, 100 V, PNP, Si, POWER TRANSISTOR
2SA1720 10 A, 100 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SA1708T-AN 功能描述:两极晶体管 - BJT BIP PNP 1A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1709S-AN 功能描述:两极晶体管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1709T-AN 功能描述:两极晶体管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA171 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-5 -20V -.05A .125W
2SA1720-AZ-L 制造商:Renesas Electronics 功能描述:Bulk