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参数资料
| 型号： | 2SA1767Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 70 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 235K |
| 代理商： | 2SA1767Q |
Transistors
1
Publication date: January 2003
SJC00030BED
2SA1767
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473A
■ Features
High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
300
V
Collector-emitter voltage (Base open)
VCEO
300
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
70
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
300
V
Emitter-base voltage (Collector open)
VEBO
IE = 1 A, IC = 0
5V
Forward current transfer ratio *
hFE
VCE =
10 V, I
C =
5 mA
30
150
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.6
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
50
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
7
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank
P
Q
hFE
30 to 100
60 to 150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SA1768S-AN | 功能描述:两极晶体管 - BJT BIP PNP 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1768T-AN | 功能描述:两极晶体管 - BJT BIP PNP 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1770S-AN | 功能描述:两极晶体管 - BJT BIP PNP 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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