参数资料
型号: 2SA1791G
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, SSMINI3-F3, 3 PIN
文件页数: 1/4页
文件大小: 224K
代理商: 2SA1791G
Transistors
1
Publication date: May 2007
SJC00380AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1791G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656G
■ Features
High transition frequency f
T
Small collector output capacitance C
ob
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
A
Forward current transfer ratio *
hFE
VCE =
10 V, I
C =
2 mA
200
500
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
0.3
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
250
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a = 25°C ± 3°C
Rank
Q
R
hFE
200 to 400
250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■ Package
Code
SSMini3-F3
Marking Symbol: AL
Pin Name
1. Base
2. Emitter
3. Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SA1792 10 A, 20 V, PNP, Si, POWER TRANSISTOR
2SA1797T100P 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1800 0.15 A, 250 V, PNP, Si, POWER TRANSISTOR
2SA1800-Y 0.15 A, 250 V, PNP, Si, POWER TRANSISTOR
2SA1806JR Si, PNP, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SA1791GRL 功能描述:TRANS PNP 50VCEO 50MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SA1791JRL 功能描述:TRANS PNP 50VCEO 50MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SA1793 制造商:Toshiba America Electronic Components 功能描述:
2SA1795-7061 功能描述:两极晶体管 - BJT V=-40/IC=-5/HFE=70 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1795-7071 功能描述:两极晶体管 - BJT V=-40/IC=-5/HFE=70 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2