参数资料
型号: 2SA1797T100P
元件分类: 小信号晶体管
英文描述: 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: MPT3, 3 PIN
文件页数: 1/3页
文件大小: 165K
代理商: 2SA1797T100P
1/2
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.04 - Rev.C
Power Transistor (50V, 3A)
2SA1797
Features
Dimensions (Unit : mm)
1) Low saturation voltage.
VCE (sat) = 0.35V (Max.) at IC / IB = 1A / 50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
Packaging specifications
Type
2SA1797
MPT3
PQ
T100
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
AG
Denotes hFE
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
6
3
0.5
2
150
55 to +150
Unit
V
A (DC)
6
A (Pulse)
1
W
°C
1 Single pulse, Pw=10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2
2SA1797
2 When mounted on a 40 40 0.7mm ceramic board.
+
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE2
hFE1
fT
Cob
50
6
0.15
200
36
0.1
0.35
V
A
V
MHz
pF
IC
=50A
IC
=1mA
IE
=50A
VCB
=50V
VEB
=5V
IC/IB
=1A/50mA
VCE/IC
=2V/1.5A
VCE/IC
=2V/0.5A
VCE
=2V, IE=0.5A, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
45
270
82
Measured using pulse current
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
相关PDF资料
PDF描述
2SA1800 0.15 A, 250 V, PNP, Si, POWER TRANSISTOR
2SA1800-Y 0.15 A, 250 V, PNP, Si, POWER TRANSISTOR
2SA1806JR Si, PNP, RF SMALL SIGNAL TRANSISTOR
2SA1807F5TLNP 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1807F5TLP 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SA1797T100Q 功能描述:两极晶体管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1804 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A
2SA1804-O 制造商:Toshiba America Electronic Components 功能描述:
2SA1804-R(F) 制造商:Toshiba America Electronic Components 功能描述:
2SA1805-O(F) 制造商:Toshiba 功能描述:PNP Bulk