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参数资料
| 型号： | 2SA1797T100P |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 165K |
| 代理商： | 2SA1797T100P |
2/2
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.04 - Rev.C
Data Sheet
2SA1797
Electrical characteristic curves
010
67
8
9
45
23
1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded EmitterOutput
Characteristics
2.0
0
1
1.2
1.4
1.6
1.8
200m
400m
600m
800m
COLLECTOR
CURRENT
:
l
C
(A)
Ta
=25°C
lB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Fig.2 Grounded Emitter Propagation
Characteristics
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
COLLECTOR
CURRENT
:
I
C
(
m
A)
BASE TO EMITTER VOLTAGE : VBE
(V)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
VCE
=2V
Ta
=
100
°C
Ta
=
25
°C
Ta
=
40
°C
-1m
-5m -0.02
-0.1
-0.5
-2 -5 -10
-2m -0.01
-0.05 -0.2
-1
5
10
20
50
100
200
500
1000
2000
5000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.3 DC Current Gain vs.
Collector Current
VCE
=2V
Ta
=100°C
Ta
=40°C
Ta
=25°C
-1m
-5m -0.02
-0.1
-0.5
-2 -5 -10
-2m -0.01
-0.05 -0.2
-1
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current
lC/lB
=20
Ta
=100°C
Ta
=40°C
Ta
=25°C
0.1
1
10
100
1
0.1
0.01
0.001
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
l
C
(A)
Fig.5 Safe Operating Area
Ta
=25°C
Single non repetitive pulse
Mounted on epoxy board
12mm
×15mm×
t0.8mm
10ms
1ms
DC
100ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1797T100Q | 功能描述:两极晶体管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1804 | 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A |
| 2SA1804-O | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1804-R(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1805-O(F) | 制造商:Toshiba 功能描述:PNP Bulk |
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