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参数资料
| 型号： | 2SA1802 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 123K |
| 代理商： | 2SA1802 |
2SA1802
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1802
Strobe Flash Applications
Medium Power Amplifier Applications
Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
Low collector saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA)
Complementary to 2SC4681
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
VCES
30
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
3
Collector current
Pulsed
(Note 1)
ICP
6
A
Base current
IB
0.5
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
相关PDF资料 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1804 | 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A |
| 2SA1804-O | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1804-R(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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| 2SA1806GRL | 功能描述:TRANS PNP 15VCEO 50MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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