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参数资料
| 型号： | 2SA1869Y |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, SC-67, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 114K |
| 代理商： | 2SA1869Y |
2SA1869
2006-11-09
4
RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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PDF描述 |
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| 2SA1869 | 3 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871 | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA2-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA2 | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1869-Y(JKT,Q,M) | 功能描述:TRANS PNP 3A 50V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:600mV @ 200mA，2A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:10W 频率 - 跃迁:100MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SA1869-Y(Q) | 制造商:Toshiba 功能描述:PNP -50V -3A 120 to 240 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Tr.,PNP,50V/3A,hfe=120to240,TO-220NIS 制造商:Toshiba 功能描述:Trans GP BJT PNP 50V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SA1869-Y(Q,M) | 功能描述:TRANS PNP 3A 50V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:600mV @ 200mA，2A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:10W 频率 - 跃迁:100MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SA1869-Y,MTSAQ(J | 功能描述:TRANS PNP 3A 50V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:600mV @ 200mA，2A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:10W 频率 - 跃迁:100MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SA1869-Y,Q(J | 功能描述:TRANS PNP 3A 50V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:600mV @ 200mA，2A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:10W 频率 - 跃迁:100MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
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