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参数资料
| 型号： | 2SA1871-GA3 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 3/6页 |
| 文件大小： | 116K |
| 代理商： | 2SA1871-GA3 |
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SILICON POWER TRANSISTOR
2SC4346,4346-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
DATA SHEET
Document No. D17082EJ3V0DS00 (3rd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
2004
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4346
TO-251 (MP-3)
2SC4346-Z
TO-252 (MP-3Z)
DESCRIPTION
The 2SC4346 is a mold power transistor developed for
high-speed switching, high voltage switching, and is ideal
for use as a driver in devices such as switching regulators,
DC/DC converters, and high-frequency power amplifiers.
FEATURES
Small package, but can control for high-current
Low collector saturation voltage
VCE(sat) = 1.0 V MAX. (IC = 2.0 A)
Ultra high-speed switching
tf = 0.3
μs MAX. (IC = 2.0 A)
Base reverse bias safe operating area is wide
VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
8.0
V
Collector Current (DC)
IC(DC)
5.0
A
Collector Current (pulse)
IC(pulse)
Note1
10
A
Base Current (DC)
IB(DC)
2.5
A
Total Power Dissipation
PT1 (TC = 25°C)
18
W
Total Power Dissipation
PT2 (TA = 25°C)
1.0
Note2, 2.0 Note3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on print board
3. Mounted on ceramic substrate of 7.5 cm
2 x 0.7 mm
The mark <R> shows major revised points.
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1871-GA3-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA3-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA2-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA1 | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA1-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1871-GA3(T1-AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1871-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SA1873-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F | 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP USV |
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