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参数资料
| 型号： | 2SA1871-GA3 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 4/6页 |
| 文件大小： | 116K |
| 代理商： | 2SA1871-GA3 |
Data Sheet D17082EJ3V0DS
2
2SC4346,4346-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector to Emitter Voltage
VCEO(SUS)
IC = 2.0 A, IB1 = 0.4 A, L = 1 mH
400
V
VCEX(SUS)1
IC = 2.0 A, IB1 =
IB2 = 0.4 A,
L = 180
μH, Clamped
450
V
VCEX(SUS)2
IC = 4.0 A, IB1 = 1.0 A,
IB2 = 0.4 A,
L = 180
μH, Clamped
400
V
Collector Cut-off Current
ICBO
VCB = 400 V, IE = 0
10
μA
ICER
VCB = 400 V, RBE = 51
Ω, TA = 125°C
1.0
mA
ICEX1
VCB = 400 V, VBE(OFF) =
5 V
100
μA
ICEX2
VCB = 400 V, VBE(OFF) =
5 V, TA = 125°C
1.0
mA
Emitter Cut-off Current
IEBO
VEB = 5.0 V, IC = 0
10
μA
DC Current Gain
Note
hFE1
VCE = 5.0 V, IC = 5 mA
15
hFE2
VCE = 5.0 V, IC = 0.5 A
20
80
hFE3
VCE = 5.0 V, IC = 2.0 A
10
Collector Saturation Voltage
Note
VCE(sat)
IC = 2.0 A, IB = 0.4 A
0.5
1.0
V
Base Saturation Voltage
Note
VBE(sat)
IC = 2.0 A, IB = 0.4 A
1.0
1.5
V
Turn-on Time
ton
IC = 2.0 A, RL = 75
Ω
0.7
μs
Storage Time
tstg
IB1 =
IB2 = 0.4 A, VCC 150 V
2.5
μs
Fall Time
tf
See Test Circuit
0.3
μs
Note Pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE2
20 to 40
30 to 60
40 to 80
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VCC = 150 V
RL = 75
Ω
IB1
IB2
IC
T.U.T.
VIN
PW
PW = 50 s
μ
VBB = 5 V
Duty Cycle
≤ 2 %
Base current
waveform
Collector current
waveform
ton
tstg tf
90 %
IB2
IB1
10 %
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1871-GA3-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA3-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA2-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA1 | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA1-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1871-GA3(T1-AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1871-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SA1873-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F | 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP USV |
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