参数资料
型号: 2SA1890Q
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SC-62, 3 PIN
文件页数: 1/3页
文件大小: 47K
代理商: 2SA1890Q
1
Transistor
2SA1890
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC5026
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
High collector to emitter voltage VCEO.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25C)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–80
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –40V, IE = 0
IC = –10A, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –2V, IC = –100mA
VCE = –2V, IC = –500mA
*2
IC = –500mA, IB = –50mA
*2
IC = –500mA, IB = –50mA
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–80
–5
120
60
typ
– 0.2
– 0.85
120
15
max
– 0.1
340
– 0.3
–1.2
30
Unit
A
V
MHz
pF
Unit: mm
1:Base
2:Collector
EIAJ:SC–62
3:Emitter
Mini Power Type Package
4.5
±0.1
2.6
±0.1
2.5
±0.1
0.4max.
1.0
+0.1
–0.2
4.0
+0.25
–0.20
3.0
±0.15
1.5
±0.1
0.4
±0.08
0.5
±0.08
1.5
±0.1
0.4
±0.04
1.6
±0.2
45
°
marking
321
*1h
FE1 Rank classification
Rank
Q
R
hFE1
120 ~ 240
170 ~ 340
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
1Z
*2 Pulse measurement
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