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参数资料
| 型号： | 2SA1924 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | 2SA1924 |
2SA1924
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1924
High-Voltage Switching Applications
High breakdown voltage: VCEO = 400 V
Low saturation voltage: VCE (sat) = 1 V (max)
(IC = 100 mA, IB = 10 mA)
Collector metal (fin) is fully covered with mold resin.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
0.5
Collector current
Pulse
ICP
1
A
Base current
IB
0.25
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1924(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1925(TP,Q) | 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1930(LBS2MATQ,M | 功能描述:TRANS PNP 2A 180V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:180V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 100mA，1A 电流 - 集电极截止（最大值）:5μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:2W 频率 - 跃迁:200MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SA1930(ONK,Q,M) | 功能描述:TRANS PNP 2A 180V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:180V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 100mA，1A 电流 - 集电极截止（最大值）:5μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:2W 频率 - 跃迁:200MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SA1930(Q) | 制造商:Toshiba America Electronic Components 功能描述:Semi,Bipolar,Transistor,2SA1930(Q),PNP,Power,Low voltage |
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