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参数资料
| 型号： | 2SA1941-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-16C1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | 2SA1941-O |
2SA1941
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SC5198
Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
10
A
Base current
IB
1
A
Collector power dissipation
(Tc = 25°C)
PC
100
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
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| 2SA1952TL/Q | 5000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1953-A | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1941-O(Q) | 制造商:Toshiba 功能描述:PNP -140V -10A 80 to 160 TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 140V 10A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:Tr.,PNP,140V/10A,hfe=80to160,TO-3P(N) 制造商:Toshiba 功能描述:Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PN |
| 2SA1941-O(Q,T) | 功能描述:两极晶体管 - BJT PNP VCEO -140V 70-W DC -10A 100W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1941-O(S1,X,S) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR |
| 2SA1941-OQ | 制造商:Toshiba America Electronic Components 功能描述:POWER TRANSISTOR 2SA1941-O(Q) |
| 2SA1941-R(Q) | 制造商:Toshiba 功能描述:PNP |
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