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| 型号： | 2SA1963-3 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 52K |
| 代理商： | 2SA1963-3 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise Amplifier,
Ultrahigh-Speed Switching Applications
Ordering number:ENN5230
2SA1963
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/83095 (KOTO) TA-0541 No.5230–1/5
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Package Dimensions
unit:mm
2018B
[2SA1963]
Features
Low noise : NF=1.5dB typ (f=1GHz).
High gain : | S2le |
2=9dB typ (f=1GHz).
High cutoff frequency : fT=5GHz typ.
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
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Absolute Maximum Ratings at Ta = 25C
C
Electrical Characteristics at Ta = 25C
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* : The 2SA1963 is classified by 10mA hFE as follows :
Marking : MS
hFE ranks : 1, 2, 3
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| S2le |
2(1)
| S2le |
2(2)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1965 | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1980-G-AP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1980-Y-BP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1980-Y-AP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1980-O-AP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1964E | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 160V 1.5A TO-220FP |
| 2SA1971(TE12L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 400V 0.5A 35MHz PW-Mini |
| 2SA1972(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1972(TE6,F,M) | 功能描述:两极晶体管 - BJT Transistor PNP, 400V, 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1972,F(J | 功能描述:TRANS PNP 500MA 400V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:500mA 电压 - 集射极击穿（最大值）:400V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 10mA，100mA 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:140 @ 20mA，5V 功率 - 最大值:900mW 频率 - 跃迁:35MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1 |
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