参数资料
型号: 2SA1980
厂商: MICRO COMMERCIAL COMPONENTS
元件分类: 小信号晶体管
英文描述: 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC PACKAGE-3
文件页数: 1/2页
文件大小: 867K
代理商: 2SA1980
2SA1980
PNP Silicon
Transistors
Features
Low Collector Saturation Voltage: VCE(sat)=0.3V(Max.)
Low Output Capacitance: Cob=4.0pF(Typ.)
Complementary Pair With 2SC5343
Marking : A1980
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
150
mA
PC
Collector power dissipation
625
mW
TJ
Junction Temperature
150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IB=0)
50
---
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
50
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
5.0
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=50Vdc,IE=0)
---
0.1
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio*
(IC=2.0Adc, VCE=6.0Vdc)
70
---
700
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
---
0.3
Vdc
fT
Transition Frequency
(VCE=10Vdc, IC=1.0mAdc)
80
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
---
4.0
7.0
pF
NF
Noise Figure
(VCE=6.0Vdc, IC=0.1mAdc,
f=1.0KHz, Rg=10K
Ω)
---
10
dB
* hFE rank / O: 70-140, Y:120-240, G:200-400, L:300-700
Typ
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 3
2006/05/16
TO-92
A
E
B
C
D
G
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
1 2 3
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
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