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参数资料
| 型号： | 2SA1987-R |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-21F1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 129K |
| 代理商： | 2SA1987-R |
2SA1987
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1987
Power Amplifier Applications
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SC5359
Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
180
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1987-R(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1KBOX | 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days |
| 2SA200 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -.005A .03 |
| 2SA2002 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE) |
| 2SA2004 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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