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参数资料
| 型号： | 2SA2018HT2L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-89, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 72K |
| 代理商： | 2SA2018HT2L |
2SA2018H
Transistors
Low-frequency Transistor
2SA2018H
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes.
!
Applications
For switching, for muting.
!
Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat)
≤ 250mV
At IC = 200mA / IB = 10mA
3) Flat lead
!
External dimensions (Units : mm)
ROHM : EMT3 Flat lead
EIAJ : SC-89
(1) Base
(3) Collector
(2) Emitter
0.12
0.27
(3)
0.7
1.0
0.5
1.6
0.85
(2)
(1)
Abbreviated symbol : BW
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
IC
ICP
PC
Tj
Tstg
Limits
15
12
500
150
55~+150
Unit
V
mA
1
A
mW
°C
Single pulse, PW=1ms
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
15
12
6
270
100
260
6.5
100
680
250
V
nA
mV
MHz
pF
IC=10
A
IC=1mA
IE=10
A
VCB=15V
VCE=2V / IC=10mA
IC=200mA / IB=10mA
VCE=2V , IE=10mA , fT=100MHz
VCB=10V , IE=0A , f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)
hFE
fT
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
!
Packaging specifications and hFE
Package name
Code
Taping
Basic ordering unit
(pieces)
hFE
2SA2018H
T2L
8000
Type
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