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参数资料
| 型号： | 2SA2061 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-3S1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 138K |
| 代理商： | 2SA2061 |
2SA2061
2004-07-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 40 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
7
V
DC
IC
2.5
Collector current
Pulse
ICP
4.0
A
Base current
IB
250
mA
t = 10 s
1000
Collector power
dissipation
DC
PC
(Note)
625
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
―
V
hFE (1)
VCE = 2 V, IC = 0.5 A
200
―
500
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
100
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 53 mA
―
0.19
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 53 mA
―
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
28
―
pF
Rise time
tr
―
70
―
Storage time
tstg
―
150
―
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ≈ 12 V, RL = 7.5
IB1 = IB2 = 53 mA
―
40
―
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
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相关代理商/技术参数 |
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|---|---|
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