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参数资料
| 型号： | 2SA2080MDTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, CMPAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 166K |
| 代理商： | 2SA2080MDTL-E |
2SA2080
Rev.1.00 Aug 10, 2005 page 3 of 5
Main Characteristics
150
Ta = 75
°C
25
Typical Transfer Characteristics
Maximum Collector Dissipation Curve
100
50
0
50
100
150
Collector
Power
Dissipation
P
C
*
(mW)
Ambient Temperature Ta (°C)
*Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
–25
Typical Output Characteristics (1)
–0.2
Collector to Emitter Voltage VCE (V)
–5
Collector
Current
I
C
(mA)
–4
–3
–2
–1
0
–0.4
–0.6
–0.8
–1.0
–20
–15
–10
–5
A
IB = 0
–5
Typical Output Characteristics (2)
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
–5
–4
–3
–2
–1
0
–5
–10
–15
–20
–25
Pulse test
IB = 0
–5
A
–10
–15
–20
–25
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
–0.2
–0.4
–0.6
–0.8
–1.0
–4
–3
–2
–1
0
VCE = –12 V
Pulse test
DC Current Transfer Ratio vs.
Collector Current
IC (mA)
DC
Current
Transfer
Ratio
h
FE
–0.01
–0.1
–1.0
–10
–100
500
400
300
200
100
0
Collector Current
IC (mA)
Gain Bandwidth Product vs.
Collector Current
Gain
Bandwidth
Product
f
T
(MHz)
500
–0.5
–1.0
–2
–5
–10
–20
VCE = –12 V
Pulse test
400
300
200
100
0
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相关代理商/技术参数 |
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|---|---|
| 2SA2081 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA2081CCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081CDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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