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参数资料
| 型号： | 2SA2081CCTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, CMPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 163K |
| 代理商： | 2SA2081CCTL-E |
2SK4207
2008-04-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 6.5 A
—
0.78
0.95
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6.5 A
5.0
11
—
S
Input capacitance
Ciss
—
2790
—
Reverse transfer capacitance
Crss
—
25
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
300
—
pF
Rise time
tr
—
53
—
Turnon time
ton
—
88
—
Fall time
tf
—
43
—
Switching time
Turnoff time
toff
—
165
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
45
—
Gatesource charge
Qgs
—
32
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 13 A
—
13
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
13
A
Pulse drain reverse current
(Note 1)
IDRP
—
39
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1400
—
ns
Reverse recovery charge
Qrr
IDR = 13 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
24
—
μC
Marking
ID=6.5
RL=62Ω
VDD=400V
50Ω
K4207
TOSHIBA
Lot No.
Part No. (or abbreviation code)
A line indicates
Lead (Pb)-Free
≤
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2081CDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA2081E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA2083 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SA2083C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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