参数资料
型号: 2SA2086STPQ
元件分类: 小信号晶体管
英文描述: 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SPT, 3 PIN
文件页数: 2/4页
文件大小: 96K
代理商: 2SA2086STPQ
2SA2086S
Transistors
2/3
!
Electrical characteristics (Ta=25
°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Ton
Tstg
Tf
IC
= 1mA
IC
= 100A
IE
= 100A
VCB
= 20V
VEB
= 4V
IC
= 1.0A
IB
= 100mA
VCE
= 2V
IC
= 100mA
VCE
= 10V
IE
=100mA
f
=10MHz
VCB
= 10V
IE
=0mA
f
=1MHz
Non repetitive pulse
30
6
120
150
350
10
30
100
20
1.0
300
390
V
A
mV
MHz
pF
ns
IC
= 1A
IB1
= 100mA
IB2
=100mA
VCC
25V
!
hFE RANK
QR
120
270
180
390
!
Electrical characteristic curves
0.01
0.1
100
1
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0.001
0.01
1
0.1
10
COLLECTOR
CURRENT
:
I
C
(A)
Fig.1 Safe Operating Area
Single
non repetitive
Pulsed
1ms
10ms
100ms
500
s
DC
0.01
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (A)
SWITCHING
TIME
:
(ns)
Fig.2 Switching Time
Ta
=25°C
VCC
= 25V
IC / IB
=10 / 1
Tstg
Tf
Ton
0.001
0.01
0.1
1
10
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.3 DC Current Gain vs.
Collector Current (
Ι)
VCE
= 2V
Ta
=125°C
Ta
=25°C
Ta
= 40°C
0.001
0.01
0.1
1
10
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.4 DC Current Gain vs.
Collector Current (
ΙΙ)
Ta
=25°C
VCE
= 5V
VCE
= 3V
VCE
= 2V
0.001
0.01
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
IC / IB
=10 / 1
Ta
=125°C
Ta
=25°C
Ta
= 40°C
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (
Ι)
0.001
0.01
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
Ta
=25°C
IC / IB
=20/1
IC / IB
=10/1
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (
ΙΙ)
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