- 您现在的位置：买卖IC网 > PDF目录49902 > 2SA2097 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA2097 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-7J1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 143K |
| 代理商： | 2SA2097 |
2SA2097
2005-02-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097
High-Speed Swtching Applications
DC-DC Converter Applications
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation: VCE (sat) = 0.27 V (max)
High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulse
ICP
10
A
Base current
IB
0.5
A
Ta
= 25°C
1
Collector power
dissipation
Tc
= 25°C
Pc
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 2 V, IC = 0.5 A
200
500
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
100
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 53 mA
0.27
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 53 mA
1.10
V
Rise time
tr
63
Storage time
tstg
280
Switching time
Fall time
tf
See Figure 1. VCC 24 V, RL =
15
IB1 = IB2 = 53 mA
55
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA2110 | 0.5 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA2120-O | 12 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2120 | 12 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2121-R | 15 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2121 | 15 A, 200 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2097(TE16L1,NQ) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 50V 5A SC-62 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 50V 5A hfe200-500 55ns PW |
| 2SA2097_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed Swtching Applications DC-DC Converter Applications |
| 2SA2098 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SA2098-2SC5887 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SA2099 | 功能描述:两极晶体管 - BJT DC-DC CONVERTER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。