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参数资料
| 型号： | 2SA2121-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 139K |
| 代理商： | 2SA2121-O |
2SA2121
2006-11-16
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2121
Power Amplifier Applications
Complementary to 2SC5949
Recommended for audio frequency amplifier output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
200
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
PC
220
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba
Semiconductor
Reliability
Handbook
(“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SA2121O | 15 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2151AO | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 2SA2151AP | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 2SA2151AY | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 2SA2154CT | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2121-O(Q) | 功能描述:两极晶体管 - BJT PNP 200V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2121-R(Q) | 功能描述:两极晶体管 - BJT Transistor PNP 200V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2124 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SA2124_09 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SA2124_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
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