参数资料
型号: 2SA2182
元件分类: 功率晶体管
英文描述: 1 A, 230 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, SC-67, 2-10U1A, 3 PIN
文件页数: 2/5页
文件大小: 166K
代理商: 2SA2182
2SA2182
2006-11-13
2
Electrical Characteristics (Tc = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
230
V
DC current gain
hFE
VCE = 5 V, IC = 0.1 A
100
320
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
0.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 100 mA
80
MHZ
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1MHZ
22.5
pF
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SA2182
Part No. (or abbreviation code)
相关PDF资料
PDF描述
2SA2222SG 10 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA733 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA812-M5-TP 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA812A 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA816 0.75 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2SA2182(Q) 功能描述:两极晶体管 - BJT PNP 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA2182(STA4,Q) 功能描述:两极晶体管 - BJT PNP 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA2183(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 2A 3-Pin TSM
2SA2186 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
2SA2186-AN 功能描述:两极晶体管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2