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参数资料
| 型号： | 2SA2190 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10U1A, SC-67, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 201K |
| 代理商： | 2SA2190 |
2SA2190
2007-06-07
1
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type
2SA2190
Power Amplifier Applications
Driver Stage Amplifier Applications
·
High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
180
V
Collector-emitter voltage
VCEO
180
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2.0
A
Base current
IB
1.0
A
Ta
= 25°C
2.0
W
Collector power dissipation
Tc
= 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Tc = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 180 V, IE = 0
5.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
5.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
180
V
hFE (1)
VCE = 5 V, IC = 0.1 A
100
320
DC current gain
hFE (2)
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.1 A
0.24
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 1 A
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 0.3 A
200
MHZ
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1MHZ
26
pF
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
1 : BASE
2 : COLLECTOR
3 : EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2192 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2192-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 10A TO-251 |
| 2SA2193 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SA2196 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications |
| 2SA2197 | 制造商:SANYO 功能描述:PNP 30V 0.5A 200 to 560 TO126 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 7A TO-126 制造商:Sanyo 功能描述:Trans GP BJT NPN 30V 7A 3-Pin TO-126 |
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