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参数资料
| 型号： | 2SA2196 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 44K |
| 代理商： | 2SA2196 |
2SA2196 / 2SC6101
No. A0462-1/5
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications ( ) : 2SA2196
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--30)40
V
Collector-to-Emitter Voltage
VCEO
(--)30
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)5
A
Collector Current (Pulse)
ICP
(--)7
A
Base Current
IB
(--)600
mA
Collector Dissipation
PC
1W
Tc=25
°C8
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)30V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
A
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(380)450
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(25)20
pF
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0462
O0406EA MS IM TC-00000206
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA2196 / 2SC6101 PNP / NPN Epitaxial Planar SiliconTransistors
DC / DC Converter Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| 2SA2199 | 制造商:ROHM 制造商全称:Rohm 功能描述:General Purpose Transistor |
| 2SA2199T2LQ | 功能描述:两极晶体管 - BJT PNP BIPLR HFE RANK Q RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2199T2LR | 功能描述:两极晶体管 - BJT PNP BIPLR HFE RANK R RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2200-TD-E | 制造商:SANYO 功能描述:PNP 60V 0.1A 200 to 400 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 60V 3A SOT89 |
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