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参数资料
| 型号： | 2SA838 |
| 英文描述： | Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
| 中文描述： | 小信号装置-小信号晶体管-高频放大器和其他 |
| 文件页数： | 1/3页 |
| 文件大小： | 81K |
| 代理商： | 2SA838 |
Transistors
1
Publication date: March 2003
SJC00005BED
2SA0838 (2SA838)
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC1359
■ Features
High transfer ratio f
T
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter saturation voltage
VBE
VCE
= 10 V, I
C
= 1 mA
0.7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 1 mA
70
220
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
V
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
VCB = 10 V, IE = 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCE = 10 V, IC = 1 mA, f = 2 MHz
22
50
Reverse transfer capacitance
Cre
VCE = 10 V, IC = 1 mA, f = 10.7 MHz
1.2
2.0
pF
(Common-emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Rank
B
C
hFE
70 to 140
110 to 220
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Note) The part number in the parenthesis shows conventional part number.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA0885 | Power Device - Power Transistors - Others |
| 2SA885 | Power Device - Power Transistors - Others |
| 2SA1483-O | 200 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1769 | PNP Epitaxial Planar Silicon Transistor for 160V/700mA Switching Applications(160V/700mA转换应用的PNP硅外延平面型晶体管) |
| 2SA1770 | PNP Epitaxial Planar Silicon Transistor for High-Voltage Switching Applications(高电压转换应用的PNP硅外延平面型晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA838BC | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA839 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Silicon PNP Power Transistors |
| 2SA841 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS) |
| 2SA842 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92VAR -40V -.05A .2W ECB |
| 2SA843 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -200V -.05A 20W BCE |
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