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参数资料
| 型号： | 2SA940A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1.5 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, SC-67, 2-10R1A, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 122K |
| 代理商： | 2SA940A |
2SA940A
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
C
ollect
or
c
urre
nt
I C
(
A
)
Ambient temperature Ta (°C)
PC – Ta
C
ollect
or
di
ssi
pa
tion
P
C
(
W
)
Collector current IC (A)
hFE – IC
D
C
cu
rre
nt
gai
n
h
FE
Collector-emitter voltage VCE (V)
Safe Operating Area
C
ollect
or
c
urre
nt
I C
(
A
)
Collector current IC (A)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(
sa
t)
(
V
)
10
IB = 5 mA
15
20
30
40
50
100
150
0
2.0
0
Common emitter
Tc = 25°C
4
8
12
16
20
0.4
0.8
1.2
1.6
32
0
(1) Tc = Ta
Infinite heat sink
(2) 200 × 200 × 2 mm A
Heat sink
(3) 100 × 100 × 2 mm A
Heat sink
(4) 50 × 50 × 2 mm A
Heat sink
(5) No heat sink
(1)
40
80
120
160
200
8
16
24
(2)
(3)
(4)
(5)
25
Tc = 100°C
500
10
0.01
Common emitter
VCE = 10 V
0.03
0.1
0.3
1
3
30
50
100
300
100 ms*
1 s*
10 ms*
IC max (pulsed)*
IC max
(continuous)
DC operation
Tc = 25°C
5
0.02
5
10
30
100
300
0.05
0.1
0.3
0.5
1
3
VCEO
max
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
5
0.05
0.01
Common emitter
IC/IB = 10
Tc = 25°C
0.03
0.1
0.3
1
3
0.1
0.3
0.5
1
3
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| 2SA965-O | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA940A(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 150V 1.5A 3-Pin(3+Tab) TO-220NIS |
| 2SA941 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS) |
| 2SA942 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-90V -.05A .3W ECB |
| 2SA949 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications |
| 2SA949_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications |
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