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参数资料
| 型号： | 2SAR522UBTL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | UMT3F, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 166K |
| 代理商： | 2SAR522UBTL |
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
General purpose transistor(-20V,-0.2A)
2SAR522M / 2SAR522EB / 2SAR522UB
Structure
Dimensions (Unit : mm)
PNP silicon epitaxial planar transistor
Features
Complements the 2SCR522M / 2SCR522EB / 2SCR522UB.
Applications
Switch, LED driver
Packaging specifications
Packaging Type
Code
Taping
Basic ordering
unit (pieces)
T2L
8000
Taping
TL
3000
Taping
TL
3000
2SAR522M
2SAR522EB
2SAR522UB
Package
VMT3
EMT3F
UMT3F
Type
Absolute maximum ratings (Ta=25
C)
Inner circuit
Symbol
Limits
Unit
VCBO
20
V
20
V
VCEO
VEBO
5
mA
400
IC
ICP
mA
200
Tj
150
°C
Tstg
55 to +150
°C
PD
200
150
mW
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power
dissipation
1 Pw=1mS Single pulse
2 Each terminal mounted on a recommended land
Parameter
2SAR522M,2SAR522EB
2SAR522UB
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
20
5
350
0.12
3
0.1
0.30
V
μA
V
MHz
pF
IC
=
50μA
IC
=
1mA
IE
=
50μA
VCB
=
20V
VEB
=
5V
IC
=
100mA, IB= 10mA
hFE
120
560
VCE
=
10V, IE=10mA, f=100MHz
VCE
=
2V, IC= 1mA
VCB
=
10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain
VMT3
EMT3F
(1)
(2)
(3)
UMT3F
2.0
0.32
0.65
1.3
2.1
1.25
0.425
(1)
(2)
(3)
0.9
0.53
0.13
Abbreviated symbol : PC
(1)
(3)
(2)
(1) Base
(2) Emitter
(3) Collector
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SAR523EB | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(-50V,-0.1A) |
| 2SAR523EBTL | 制造商:ROHM Semiconductor 功能描述: |
| 2SAR523M | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(-50V,-0.1A) |
| 2SAR523MT2L | 功能描述:TRANS PNP 50V 0.1A VMT3 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:400mV @ 5mA，50mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:120 @ 1mA，6V 功率 - 最大值:150mW 频率 - 跃迁:300MHz 安装类型:表面贴装 封装/外壳:SOT-723 供应商器件封装:VMT3 标准包装:1 |
| 2SAR523UB | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose transistor(-50V,-0.1A) |
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