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参数资料
| 型号： | 2SB0943P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | SC-67, TO-220F, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 189K |
| 代理商： | 2SB0943P |
Power Transistors
1
2SB0943
2SB0943 (2SB943)
(2SB943)
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1268
I Features
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T
C = 25°C
Unit: mm
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
7V
Peak collector current
ICP
6A
Collector current
IC
3A
Collector power
TC = 25°CPC
30
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB =
5 V, I
C = 0
50
A
Collector to emitter voltage
VCEO
IC =
10 mA, I
B = 0
80
V
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE =
2 V, I
C =
0.5 A
90
260
Collector to emitter saturation voltage
VCE(sat)
IC =
2 A, I
B =
0.1 A
0.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 2 A, IB = 0.1 A
1.5
V
Transition frequency
fT
VCE =
10 V, I
C =
0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC =
0.5 A, I
B1 =
50 mA, I
B2 = 50 mA
0.3
s
Storage time
tstg
1.1
s
Fall time
tf
0.3
s
Rank
Q
P
hFE2
90 to 180
130 to 260
10.0±0.2
5.5±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±0.2
φ 3.1±0.1
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
Note) *: Rank classification
Note.) The Part number in the Parenthesis shows conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB0950R | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0950P | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0950Q | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0950AP | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0950AR | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB0943Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-220F |
| 2SB0944 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Power Switching |
| 2SB0944(2SB944) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
| 2SB09440P | 功能描述:TRANS PNP 80VCEO 4A TO-220F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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