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参数资料
| 型号： | 2SB1002CJTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, SC-62, UPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 63K |
| 代理商： | 2SB1002CJTL-E |
2SB1002
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–70
—
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–50
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–6
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–0.1
A
VCB = –50 V, IE = 0
Emitter cutoff current
IEBO
—
–0.1
A
VEB = –4 V, IC = 0
DC current transfer ratio
hFE
160
—
320
VCE = –2 V, IC = –0.1 A
Collector to emitter saturation voltage
VCE(sat)
—
–0.6
V
IC = –1 A,
IB = –0.1 A (Pulse test)
Base to emitter saturation voltage
VBE(sat)
—
–1.2
V
IC = –1 A,
IB = –0.1 A (Pulse test)
Gain bandwidth product
fT
—
150
—
MHz
VCE = –2 V,
IC = –10 mA (Pulse test)
Collector output capacitance
Cob
—
35
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
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