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参数资料
| 型号： | 2SB1002CJTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, SC-62, UPAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 63K |
| 代理商： | 2SB1002CJTL-E |
2SB1002
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
0.4
0.8
1.2
50
Ambient Temperature Ta (°C)
Collector
Power
Dissipation
P
C
(W)
(on
the
alumina
ceramic
board)
Maximum Collector Dissipation Curve
100
150
0
–100
–80
–60
–40
–20
–2
–4
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics
–6
–8
–10
IB = 0
–0.05 mA
–0.1
–0.15
–0.25
–0.35
–0.45
–0.2
–0.3
–0.4
0
–2.0
–1.6
–1.2
–0.8
–0.4
–0.8
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(A)
Typical Output Characteristics
–1.2
–1.6
–2.0
IB = 0
–50
–40
–30
–20
–10
mA
0
–1,000
–300
–100
–30
–10
–3
–1
–0.2
–0.4
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
–0.6
–0.8
–1.0
VCE = –2 V
–1
10,000
3,000
1,000
300
30
10
100
–3
–10
–30
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
–100 –300 –1,000
Pulse
VCE = –2 V
–0.3
3,000
1,000
300
100
30
10
3
–1.0
–3
Collector to Base Voltage VCB (V)
Collector
Output
Capacitance
C
ob
(pF)
Collector Output Capacitance
vs. Collector to Base Voltage
–10
–30
–100 –300
f = 1 MHz
IE = 0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1005 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220 -50V -4A 30W BCE |
| 2SB1007 | 制造商:JMNIC 制造商全称:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SB1008 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. TO-126-40V -2A 10W ECB |
| 2SB1009 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-126 |
| 2SB1010 | 制造商:ROHM 制造商全称:Rohm 功能描述:TRANSISTORS TO 92L TO-92LS MRT |
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