参数资料
型号: 2SB1018A-O
元件分类: 功率晶体管
英文描述: 7 A, 80 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10R1A, 3 PIN
文件页数: 1/5页
文件大小: 170K
代理商: 2SB1018A-O
2SB1018A
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications
Power Amplifier Applications
High collector current: IC = 7 A
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A)
Complementary to 2SD1411A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
7
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相关PDF资料
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2SB1020A 7 A, 100 V, PNP, Si, POWER TRANSISTOR
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2SB1026DLUR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1026DLTR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1026DMUR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
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