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参数资料
| 型号： | 2SB1020A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-10R1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 149K |
| 代理商： | 2SB1020A |
2SB1020A
2004-07-26
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Complementary to 2SD1415A
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
DC
IC
7
Collector current
Pulse
ICP
10
A
Base current
IB
0.7
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
≈ 5 k
Collector
≈ 150
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PDF描述 |
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| 2SB1026DMUL | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1026DLUR | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1026DLTR | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1026DMUR | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1020A(F) | 功能描述:两极晶体管 - BJT HFE 2000(min) VCE-3V Vcbo -100V DC -7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1020A_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon PNP Triple Diffused Type (Darlington Power) |
| 2SB1021 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR 2-10L1A-80V -7A 40W BCE |
| 2SB1022 | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A -60V -7A 40W BCE |
| 2SB1023 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A -60V -3A 25W BCE |
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