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参数资料
| 型号： | 2SB1020A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-10R1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 149K |
| 代理商： | 2SB1020A |
2SB1020A
2004-07-26
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
―
100
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
4.0
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
100
―
V
hFE (1)
VCE = 3 V, IC = 3 A
2000
―
15000
DC current gain
hFE (2)
VCE = 3 V, IC = 7 A
1000
―
VCE (sat) (1) IC = 3 A, IB = 6 mA
―
0.95
1.5
Collector-emitter saturation voltage
VCE (sat) (2) IC = 7 A, IB = 14 mA
―
1.3
2.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 3 A, IB = 6 mA
―
1.55
2.5
V
Turn-on time
ton
―
0.8
―
Storage time
tstg
―
2.0
―
Switching time
Fall time
tf
IB1 = IB2 = 6 mA, duty cycle ≤ 1%
―
2.5
―
s
Marking
I B1
20 s
VCC ≈ 45 V
Output
15
IB1
IB2
Input
I B2
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
B1020A
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1020A(F) | 功能描述:两极晶体管 - BJT HFE 2000(min) VCE-3V Vcbo -100V DC -7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1020A_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon PNP Triple Diffused Type (Darlington Power) |
| 2SB1021 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR 2-10L1A-80V -7A 40W BCE |
| 2SB1022 | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A -60V -7A 40W BCE |
| 2SB1023 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A -60V -3A 25W BCE |
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