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参数资料
| 型号： | 2SB1026DMTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, SC-62, UPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 67K |
| 代理商： | 2SB1026DMTL-E |
2SB1026
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–120
—
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–100
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–10
A
VCB = –100 V, IE = 0
DC current transfer ratio
hFE1
100
—
200
VCE = –5 V, IC = –150 mA
hFE2
30
—
VCE = –5 V,
IC = –500 mA (Pulse test)
Collector to emitter saturation voltage
VCE(sat)
—
–1
V
IC = –500 mA,
IB = –50 mA (Pulse test)
Base to emitter voltage
VBE
—
–0.9
V
VCE = –5 V, IC = –150 mA
Gain bandwidth product
fT
—
140
—
MHz
VCE = –5 V, IC = –150 mA
Collector output capacitance
Cob
—
20
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
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