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参数资料
| 型号： | 2SB1026DMTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, SC-62, UPAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 67K |
| 代理商： | 2SB1026DMTL-E |
2SB1026
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(A)
0
–2–4–6–8
–10
–1.0
–0.8
–0.6
–0.2
–0.4
IB = 0
–0.5 mA
–1
–2
–5
–10
–20
–30
–40
–60
–80
–100
–120
Typical Output Characteristics
–1
–2
–5
–10
–20
–50
–100
–200
–500
Base to Emitter Voltage VBE (V)
–0.2
–0.4
0
–0.6
–0.8
–1.0
Collector
Current
I
C
(mA)
VCE = –5 V
Pulse
Ta
=
75
°C
25
–25
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100 –300 –1,000
0
100
200
300
400
500
600
DC
Current
Transfer
Ratio
h
FE
Ta = 75
°C
25
–25
VCE = –5 V
Pulse
Saturation Voltage vs. Collector Current
Collector Current IC (mA)
Base
to
Emitter
Saturation
Voltage
V
BE
(sat)
(V)
Collector
to
Emitter
Saturation
Voltage
V
CE
(sat)
(V)
–1
–3
–10
–30
–100 –300 –1,000
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
IC = 10 IB
Pulse
VBE (sat)
VCE (sat)
25
75
–25
Ta = 75
°C
Ta =
–25°
C
Gain Bandwidth Product vs.
Collector Current
100
200
300
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
–10
–30
–100
–300
–1,000
VCE = –5 V
0
50
100
150
Ambient Temperature Ta (°C)
Collector
Power
Dissipation
P
c
(W)
(on
the
alumina
ceramic
board)
Maximum Collector Dissipation Curve
1.2
0.8
0.4
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|---|---|
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| 2SB1026 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1026DMTR(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB1027 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial |
| 2SB1027EH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SB1027EJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SB1027EK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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