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参数资料
| 型号： | 2SB1070A |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封装： | N-G1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 212K |
| 代理商： | 2SB1070A |
Power Transistors
1
Publication date: February 2003
SJD00040AED
2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±
0.5
14.4
±
0.5
Unit: mm
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) Self-supported type package is also prepared.
Rank
Q
P
hFE2
90 to 180
130 to 260
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB1070
VCBO
40
V
(Emitter open)
2SB1070A
50
Collector-emitter voltage 2SB1070
VCEO
20
V
(Base open)
2SB1070A
40
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power dissipation
PC
25
W
Ta
= 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB1070
VCEO
IC
= 10 mA, I
B
= 0
20
V
(Base open)
2SB1070A
40
Collector-base cutoff
2SB1070
ICBO
VCB = 40 V, IE = 0
50
A
current (Emitter open)
2SB1070A
VCB
= 50 V, I
E
= 0
50
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
50
A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE
= 2 V, I
C
= 1 A
90
260
Base-emitter saturation voltage
VBE(sat)
IC = 2 A, IB = 0.1 A
1.5
V
Collector-emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 0.1 A
0.5
V
Transition frequency
fT
VCE
= 5 V, I
C
= 0.5 A, f = 10 MHz
150
MHz
Turn-on time
ton
IC = 2 A
0.3
s
Storage time
tstg
IB1 = 0.2 A, IB2 = 0.2 A
0.4
s
Fall time
tf
VCC
= 20 V
0.1
s
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1070AP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1070AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1070AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1070P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1070Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | TO-221VAR |
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