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参数资料
| 型号： | 2SB1073 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, MINIPAK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 86K |
| 代理商： | 2SB1073 |
2SB1073
Silicon
PNP epitaxial planer
Transistors
Features
Low collector to emitter saturation voltage VCE(sat)
Large peak collector current ICP
Mini power type package
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-20
V
VCBO
Collector-Base Voltage
-30
V
VEBO
Emitter-Base Voltage
-7
V
ICP
Peak Collector Current
-7
A
IC
Collector Current
-4
A
PC
Collector Dissipation
1
W
TJ
Operating Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
-20
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
-30
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
-7
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-30Vdc, IE=0Vdc)
---
-100
nAdc
IEBO
Emitter Cutoff Current
(VEB=-7Vdc, IC=0Vdc)
---
-100
nAdc
hFE
DC Current Gain (note 1)
(IC=-2Adc, VCE=-2Vdc) (note 2)
120
---
315
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-3Adc, IB=-0.1Adc) (note 2)
---
-0.6
-1
Vdc
fT
Current Gain-Bandwidth Product
(VCB=-6Vdc, IE=-50mAdc, f=200MHz)
---
120
---
MHz
Cob
Output Capacitance
(VCB=-20Vdc, f=1.0MHz, IE=0)
---
40
---
pF
Note: 1. hFE Rank Classification
Rank
Q
R
hFE
120~205
180~315
Marking Symbol
IQ
IR
2. Pulse measurement
Revision: 3
2007/03/01
A
B
C
D
G
H
F
E
K
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SOT-89
omponents
20736 Marilla
Street Chatsworth
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MCC
1
32
1.BASE
2.COLLECTOR
3.EMITTER
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
2SB1073-Q
2SB1073-R
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|---|---|
| 2SB1094-L-AZ | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1094-AZ | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1120-F | 2500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1120-E | 2500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1120-F | 2500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB10730RL | 功能描述:TRANS PNP LF 20VCEO 4A MINI-PWR RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1073-PQR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1073Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | SC-62 |
| 2SB1073-Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB: 2SB1073 |
| 2SB1073-QR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB: 2SB1073 |
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