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参数资料
| 型号： | 2SB1079-E |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 145K |
| 代理商： | 2SB1079-E |
2SB1079
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–100
V
Collector to emitter voltage
V
CEO
–100
V
Emitter to base voltage
V
EBO
–7
V
Collector current
I
C
–20
A
Collector peak current
I
C(peak)
–30
A
Base current
I
B
–3
A
Collector power dissipation
P
C*
1
100
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–100
—
V
I
C = –0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BRCEO
–100
—
V
I
C = –25 mA, RBE = ∞
Collector to emitter sustain
voltage
V
CEO(sus)
–100
—
V
I
C = –200 mA, RBE = ∞*
1
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
—
–100
AV
CB = –100 V, IE = 0
I
CEO
—
–1.0
mA
V
CE = –80 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = –3 V, IC = –10 A*
1
Collector to emitter saturation
voltage
V
CE(sat)1
—
–2.0
V
I
C = –10 A, IB = –20 mA*
1
Base to emitter saturation
voltage
V
BE(sat)1
—
–2.5
V
Collector to emitter saturation
voltage
V
CE(sat)2
—
–3.0
V
I
C = –20 A, IB = –200 mA*
1
Base to emitter saturation
voltage
V
BE(sat)2
—
–3.5
V
Turn on time
t
on
—
0.6
—
sI
C = –10 A, IB1 = –IB2 = –20 mA
Storage time
t
stg
—
3.5
—
s
Note:
1. Pulse Test.
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