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参数资料
| 型号： | 2SB1079-E |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 145K |
| 代理商： | 2SB1079-E |
2SB1079
3
Maximum Collector Dissipation
Curve
120
80
40
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
Area of Safe Operation
–100
–30
–10
–3
–1.0
Collector
current
I
C
(A)
–0.3
–0.1
–3
–10
–100
–30
–300
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 Shot Pulse
iC(peak)
1
s
IC(max) DC
T
C
= 25
°C
PW
=
10
ms
1
ms
100
s
Typical Output Characteristics
TC = 25°C
IB = –0.5 mA
–1
–1.5
–2
–2.5
–4
–20
–16
–12
–8
–4
0–1
Collector
current
I
C
(A)
–2
Collector to emitter voltage VCE (V)
–3
–5
–4
–3.5
–3
DC Current Transfer Ratio vs.
Collector Current
30000
10000
3000
300
100
1000
30
–0.3
–1.0
–3
–10
–30
DC
current
transfer
ratio
h
FE
Collector current IC (A)
VCE = –3 V
Pulse
Ta
= 75
°C
25°
C
–25
°C
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